HY57V561620T
4Banks x 4M x 16Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V561620 is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the Mobile applications
which require low power consumption and extended temperature range. HY57V561620 is organized as 4 banks of
4,194,304x16.
HY57V561620 is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs
are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline ( CAS latency of 2 or 3), the number of consecutive read or write
cycles
initiated
by
a
single
control
command
(Burst
length
of
1,2,4,8
or
full
page),
and
the
burst
count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
鈥?/div>
鈥?/div>
鈥?/div>
Single 3.3V
鹵
0.3V power supply
All device pins are compatible with LVTTL interface
JEDEC standard 400mil 54pin TSOP-II with 0.8mm
of pin pitch
- 1, 2, 4, 8 and Full Page for Sequential Burst
鈥?/div>
All inputs and outputs referenced to positive edge of
system clock
鈥?/div>
鈥?/div>
Data mask function by UDQM and LDQM
Internal four banks operation
鈥?/div>
- 1, 2, 4 and 8 for Interleave Burst
Programmable C A S Latency ; 2, 3 Clocks
鈥?/div>
鈥?/div>
鈥?/div>
Auto refresh and self refresh
8192 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HY57V561620T-HI
HY57V561620T-SI
HY57V561620LT-HI
HY57V561620LT-SI
Clock Frequency
133MHz
100MHz
133MHz
Power
Normal
Power
Organization
Interface
Package
4Banks x 4Mbits
x16
Low Power
LVTTL
400mil 54pin TSOP II
100MHz
This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Revision 0.1/ Apr.01
next
HY57V561620T-I相關(guān)型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
4 Banks x 8M x 8Bit Synchronous DRAM
HYNIX [Hyn...
-
英文版
Analog IC
ETC
-
英文版
Analog IC
ETC
-
英文版
Analog IC
ETC
-
英文版
Analog IC
ETC
-
英文版
Analog IC
ETC
-
英文版
Analog IC
ETC
-
英文版
4 Banks x 8M x 16Bit Synchronous DRAM
HYNIX [Hyn...
-
英文版
4 Banks x 1M x 32Bit Synchronous DRAM
HYNIX
-
英文版
4 Banks x 1M x 32Bit Synchronous DRAM
HYNIX [Hyn...
-
英文版
4Banks x 4M x 16Bit Synchronous DRAM
HYNIX
-
英文版
4Banks x 4M x 16Bit Synchronous DRAM
HYNIX [Hyn...
-
英文版
64Mx4|3.3V|8K|75|SDR SDRAM - 256M
ETC
-
英文版
4 Banks x 8M x 8Bit Synchronous DRAM
HYNIX [Hyn...
-
英文版
32Mx8|3.3V|8K|75|SDR SDRAM - 256M
ETC
-
英文版
8Mx8 bit Synchronous DRAM Series
HYNIX
-
英文版
8Mx8 bit Synchronous DRAM Series
HYNIX [Hyn...
-
英文版
8Mx8 bit Synchronous DRAM Series
HYNIX
-
英文版
8Mx8 bit Synchronous DRAM Series
HYNIX [Hyn...
-
英文版
8Mx8 bit Synchronous DRAM Series
HYNIX