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HY29F400BR90 Datasheet

  • HY29F400BR90

  • 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory

  • 40頁

  • HYNIX

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HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES
n
5 Volt Read, Program, and Erase
鈥?Minimizes system-level power requirements
n
High Performance
鈥?Access times as fast as 45 ns
n
Low Power Consumption
鈥?20 mA typical active read current in byte
mode, 28 mA typical in word mode
鈥?30 mA typical program/erase current
鈥?5 碌A(chǔ) maximum CMOS standby current
n
Compatible with JEDEC Standards
鈥?Package, pinout and command-set
compatible with the single-supply Flash
device standard
鈥?Provides superior inadvertent write
protection
n
Sector Erase Architecture
鈥?Boot sector architecture with top and
bottom boot block options available
鈥?One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and seven 64 Kbyte sectors in byte mode
鈥?One 8 Kword, two 4 Kword, one 16 Kword
and seven 32 Kword sectors in word mode
鈥?A command can erase any combination of
sectors
鈥?Supports full chip erase
n
Erase Suspend/Resume
鈥?Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
GENERAL DESCRIPTION
The HY29F400 is a 4 Megabit, 5 volt only CMOS
Flash memory organized as 524,288 (512K) bytes
or 262,144 (256K) words. The device is offered in
industry-standard 44-pin PSOP and 48-pin TSOP
packages.
The HY29F400 can be programmed and erased
in-system with a single 5-volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 55 ns over
the full operating voltage range of 5.0 volts 鹵 10%
are offered for timing compatibility with the zero
wait state requirements of high speed micropro-
Revision 5.2, May 2001
n
Sector Protection
鈥?Any combination of sectors may be
locked to prevent program or erase
operations within those sectors
n
Temporary Sector Unprotect
鈥?Allows changes in locked sectors
(requires high voltage on RESET# pin)
n
Internal Erase Algorithm
鈥?Automatically erases a sector, any
combination of sectors, or the entire chip
n
Internal Programming Algorithm
鈥?Automatically programs and verifies data
at a specified address
n
Fast Program and Erase Times
鈥?Byte programming time: 7 碌s typical
鈥?Sector erase time: 1.0 sec typical
鈥?Chip erase time: 11 sec typical
n
Data# Polling and Toggle Status Bits
鈥?Provide software confirmation of
completion of program or erase
operations
n
Ready/Busy# Output (RY/BY#)
鈥?Provides hardware confirmation of
completion of program and erase
operations
n
100,000 Program/Erase Cycles Minimum
n
Space Efficient Packaging
鈥?Available in industry-standard 44-pin
PSOP and 48-pin TSOP and reverse
TSOP packages
LOGIC DIAGRAM
18
A[17:0]
DQ[7:0]
7
CE#
OE#
WE#
RESET#
BYTE#
RY/BY#
DQ[14:8]
DQ[15]/A-1
8

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