HY29F080
8 Megabit (1M x 8), 5 Volt-only, Flash Memory
KEY FEATURES
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5 Volt Read, Program, and Erase
鈥?Minimizes system-level power
requirements
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High Performance
鈥?Access times as fast as 70 ns
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Low Power Consumption
鈥?15 mA typical active read current
鈥?30 mA typical program/erase current
鈥?5 碌A(chǔ) maximum CMOS standby current
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Compatible with JEDEC Standards
鈥?Package, pinout and command-set
compatible with the single-supply Flash
device standard
鈥?Provides superior inadvertent write
protection
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Sector Erase Architecture
鈥?Sixteen equal size sectors of 64K bytes
each
鈥?A command can erase any combination of
sectors
鈥?Supports full chip erase
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Erase Suspend/Resume
鈥?Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
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Sector Group Protection
鈥?Sectors may be locked in groups of two to
prevent program or erase operations
within that sector group
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Temporary Sector Unprotect
鈥?Allows changes in locked sectors
(requires high voltage on RESET# pin)
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Internal Erase Algorithm
鈥?Automatically erases a sector, any
combination of sectors, or the entire chip
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Internal Programming Algorithm
鈥?Automatically programs and verifies data
at a specified address
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Fast Program and Erase Times
鈥?Byte programming time: 7 碌s typical
鈥?Sector erase time: 1.0 sec typical
鈥?Chip erase time: 16 sec typical
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Data# Polling and Toggle Status Bits
鈥?Provide software confirmation of
completion of program or erase
operations
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Ready/Busy# Pin
鈥?Provides hardware confirmation of
completion of program and erase
operations
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Minimum 100,000 Program/Erase Cycles
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Space Efficient Packaging
鈥?Available in industry-standard 40-pin
TSOP and 44-pin PSOP packages
LOGIC DIAGRAM
GENERAL DESCRIPTION
The HY29F080 is an 8 Megabit, 5 volt-only CMOS
Flash memory organized as 1,048,576 (1M) bytes
of eight-bits each. The device is offered in indus-
try-standard 44-pin PSOP and 40-pin TSOP pack-
ages.
The HY29F080 can be programmed and erased
in-system with a single 5-volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 70ns over the
full operating voltage range of 5.0 volts 鹵 10% are
offered for timing compatibility with the zero wait
state requirements of high speed microprocessors.
Revision 6.1, May 2001
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A[19:0]
RESET#
RY/BY#
CE#
OE#
WE#
DQ[7:0]
8