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HY29F040AT-12 Datasheet

  • HY29F040AT-12

  • x8 Flash EEPROM

  • 36頁

  • ETC

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HY29F040A
4 Megabit (512K x 8), 5 Volt-only, Flash Memory
KEY FEATURES
n
5 Volt Read, Program, and Erase
鈥?Minimizes system-level power
requirements
n
High Performance
鈥?Access times as fast as 55 ns
n
Low Power Consumption
鈥?20 mA typical active read current
鈥?30 mA typical program/erase current
鈥?5 碌A(chǔ) maximum CMOS standby current
n
Compatible with JEDEC Standards
鈥?Package, pinout and command-set
compatible with the single-supply Flash
device standard
鈥?Provides superior inadvertent write
protection
n
Sector Erase Architecture
鈥?Eight equal size sectors of 64K bytes
each
鈥?A command can erase any combination of
sectors
鈥?Supports full chip erase
n
Erase Suspend/Resume
鈥?Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
n
Sector Protection
鈥?Sectors may be locked to prevent
program or erase operations within that
sector
n
Automatic Erase Algorithm
鈥?Erases a sector, any combination of
sectors, or the entire chip
n
Automatic Programming Algorithm
鈥?Programs and verifies data at a specified
address
n
Fast Program and Erase Times
鈥?Byte programming time: 7 碌s typical
鈥?Sector erase time: 1.0 sec typical
鈥?Chip erase time: 8 sec typical
n
Data# Polling and Toggle Status Bits
鈥?Provide software confirmation of
completion of program or erase
operations
n
Minimum 100,000 Program/Erase Cycles
n
Space Efficient Packaging
鈥?Available in industry-standard 32-pin
TSOP and reverse TSOP and 32-pin
PLCC packages
GENERAL DESCRIPTION
The HY29F040A is a 4 Megabit, 5 volt-only, CMOS
Flash memory organized as 524,288 (512K) bytes
of eight-bits each. The device is offered in indus-
try-standard 32-pin TSOP and reverse TSOP and
32-pin PLCC packages.
The HY29F040A can be programmed and erased
in-system with a single 5-volt V
CC
supply. Inter-
nally generated and regulated voltages are pro-
vided for program and erase operations, so that
the device does not require a high voltage power
supply to perform those functions. The device can
also be programmed in standard EPROM pro-
grammers. Access times as fast as 55 ns over
the full operating voltage range of 5.0 volts 鹵 10%
are offered for timing compatibility with the zero
wait state requirements of high speed micropro-
cessors.
Revision 2.2, May 2001
LOGIC DIAGRAM
19
A[18:0]
DQ[7:0]
8
CE#
OE#
WE#

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