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HX6656XQFT Datasheet

  • HX6656XQFT

  • 32K x 8 ROM-SOI

  • 12頁

  • ETC

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Military & Space Products
32K x 8 ROM鈥擲OI
FEATURES
RADIATION
鈥?Fabricated with RICMOS
鈩?/div>
IV Silicon on Insulator
(SOI) 0.75
碌m
Process (L
eff
= 0.6
碌m)
鈥?Total Dose Hardness through 1x10
6
rad(SiO
2
)
鈥?Typical Operating Power <15 mW/MHz
鈥?Dynamic and Static Transient Upset
Hardness through 1x10
9
rad(Si)/s
鈥?Dose Rate Survivability through 1x10
11
rad(Si)/s
鈥?Neutron Hardness through 1x10
14
cm
-2
鈥?SEU Immune
鈥?Latchup Free
鈥?Asynchronous Operation
鈥?CMOS or TTL Compatible I/O
鈥?Single 5 V
鹵
10% Power Supply
OTHER
鈥?Read Cycle Times
< 17 ns (Typical)
鈮?/div>
25 ns (-55 to 125擄C)
HX6656
鈥?Packaging Options
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened ROM is a high perform-
ance 32,768 word x 8-bit read only memory with industry-
standard functionality. It is fabricated with Honeywell鈥檚
radiation hardened technology, and is designed for use in
systems operating in radiation environments. The ROM
operates over the full military temperature range and re-
quires only a single 5 V
鹵
10% power supply. The ROM is
available with either TTL or CMOS compatible I/O. Power
consumption is typically less than 15 mW/MHz in operation,
and less than 5 mW when de-selected. The ROM operation
is fully asynchronous, with an associated typical access
time of 14 ns.
Honeywell鈥檚 enhanced SOI RICMOS
鈩?/div>
IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout, and pro-
cess hardening techniques. The RICMOS
鈩?/div>
IV process is a
5-volt, SIMOX CMOS technology with a 150 脜 gate oxide
and a minimum drawn feature size of 0.75
碌m
(0.6
碌m
effective gate length鈥擫
eff
). Additional features include
tungsten via plugs, Honeywell鈥檚 proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability.

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