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HX6356-BHC Datasheet

  • HX6356-BHC

  • 32K x 8 STATIC RAM-SOI

  • 12頁

  • ETC

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Aerospace Electronics
32K x 8 STATIC RAM鈥擲OI
FEATURES
RADIATION
鈥?Fabricated with RICMOS
鈩?/div>
IV Silicon on Insulator (SOI)
0.75
碌m
Process (L
eff
= 0.6
碌m)
鈥?Total Dose Hardness through 1x10 rad(SiO
2
)
鈥?Neutron Hardness through 1x10
14
cm
-2
鈥?Typical Operating power < 15 mW/MHz
鈥?Dynamic and Static Transient Upset Hardness
through 1x10
11
rad(Si)/s
鈥?Dose Rate Survivability through 1x10
12
rad(Si)/s
鈥?Soft Error Rate of <1x10
-10
upsets/bit-day
in Geosynchronous Orbit
鈥?Latchup Free
鈥?Asynchronous Operation
鈥?CMOS or TTL Compatible I/O
鈥?Single 5 V
鹵
10% Power Supply
6
HX6356
OTHER
鈥?Listed On SMD# 5962-95845
鈥?Fast Read/Write Cycle Times
鈮?/div>
17 ns (Typical)
鈮?/div>
25 ns (-55 to 125擄C)
鈥?Packaging Options
- 36-Lead CFP鈥擝ottom Braze (0.630 in. x 0.650 in.)
- 36-Lead CFP鈥擳op Braze (0.630 in. x 0.650 in.)
GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high
performance 32,768 word x 8-bit static random access
memory with industry-standard functionality. It is fabricated
with Honeywell鈥檚 radiation hardened technology, and is
designed for use in systems operating in harsh, transient
radiation environments. The RAM operates over the full
military temperature range and requires only a single 5 V
鹵
10% power supply. The RAM is available with either TTL or
CMOS compatible I/O. Power consumption is typically less
than 15 mW/MHz in operation, and less than 5 mW when
de-selected. The RAM read operation is fully asynchro-
nous, with an associated typical access time of 14 ns at 5V.
Honeywell鈥檚 enhanced SOI RICMOS
鈩?/div>
IV (Radiation Insen-
sitive CMOS) technology is radiation hardened through the
use of advanced and proprietary design, layout and pro-
cess hardening techniques. The RICMOS
鈩?/div>
IV process is a
5-volt, SIMOX CMOS technology with a 150 脜 gate oxide
and a minimum drawn feature size of 0.75
碌m
(0.6
碌m
effective gate length鈥擫
eff
). Additional features include
tungsten via plugs, Honeywell鈥檚 proprietary SHARP pla-
narization process, and a lightly doped drain (LDD) struc-
ture for improved short channel reliability. A 7 transistor
(7T) memory cell is used for superior single event upset
hardening, while three layer metal power bussing and the
low collection volume SIMOX substrate provide improved
dose rate hardening.

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