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HUFA76407D3S Datasheet

  • HUFA76407D3S

  • 11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power M...

  • 10頁

  • FAIRCHILD

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HUFA76407D3, HUFA76407D3S
Data Sheet
December 2001
11A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET廬 Power MOSFETs
Packaging
JEDEC TO-251AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
JEDEC TO-252AA
DRAIN
(FLANGE)
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.092
鈩?
V
GS
=
10V
- r
DS(ON)
= 0.107
鈩?
V
GS
=
5V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Switching Time vs R
GS
Curves
HUFA76407D3
HUFA76407D3S
Symbol
D
G
Ordering Information
S
PART NUMBER
HUFA76407D3
HUFA76407D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
76407D
76407D
NOTE: When ordering, use the entire part number. Add the suf鏗亁 T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA76407D3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Speci鏗乪d
HUFA76407D3,
HUFA76407D3S
60
60
鹵
16
11
12
6
6
Figure 4
Figures 6, 14, 15
38
0.25
-55 to 175
300
260
UNITS
V
V
V
A
A
A
A
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k
鈩?/div>
) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 135
o
C, V
GS
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this speci鏗乧ation is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
漏2001 Fairchild Semiconductor Corporation
HUFA76407D3, HUFA76407D3S Rev. B

HUFA76407D3S 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 75

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 60V

  • 12A

  • 92 毫歐 @ 13A，10V

  • 3V @ 250µA

  • 11.3nC @ 10V

  • 350pF @ 25V

  • 38W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 管件

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