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HUFA75823D3S Datasheet

  • HUFA75823D3S

  • 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET

  • 10頁

  • FAIRCHILD

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HUFA75823D3, HUFA75823D3S
Data Sheet
December 2001
14A, 150V, 0.150 Ohm, N-Channel,
UltraFET廬 Power MOSFET
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.150鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
HUFA75823D3
HUFA75823D3S
Symbol
D
Ordering Information
PART NUMBER
HUFA75823D3
PACKAGE
TO-251AA
TO-252AA
BRAND
75823D
75823D
G
HUFA75823D3S
S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75823D3ST.
T
C
= 25
o
C, Unless Otherwise Specified
HUFA75823D3, HUFA75823D3S
UNITS
V
V
V
A
A
150
150
鹵20
14
10
Figure 4
Figures 6, 14, 15
85
0.57
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTES:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUFA75823D3, HUFA75823D3S Rev. B

HUFA75823D3S 產品屬性

  • High Voltage Switches for Power Processing

  • 75

  • 分離式半導體產品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道,金屬氧化物

  • 邏輯電平門

  • 150V

  • 14A

  • 150 毫歐 @ 14A,10V

  • 4V @ 250µA

  • 54nC @ 20V

  • 800pF @ 25V

  • 85W

  • 表面貼裝

  • TO-252-3,DPak(2 引線+接片),SC-63

  • I-Pak

  • 管件

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