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HUFA75637S3S Datasheet

  • HUFA75637S3S

  • 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET

  • 202.92KB

  • 10頁(yè)

  • FAIRCHILD

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HUFA75637P3, HUFA75637S3S
Data Sheet
December 2001
44A, 100V, 0.030 Ohm, N-Channel,
UltraFET廬 Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
Features
DRAIN
(FLANGE)
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.030鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
HUFA75637P3
HUFA75637S3S
Symbol
D
鈥?UIS Rating Curve
Ordering Information
PART NUMBER
PACKAGE
TO-220AB
TO-263AB
BRAND
75637P
75637S
HUFA75637P3
G
S
HUFA75637S3S
NOTE: When ordering, use the entire part number. Add the suffix T
to obtain the variant in tape and reel, e.g., HUFA75637S3ST.
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HUFA75637P3, HUFA75637S3S
UNITS
V
V
V
A
A
100
100
鹵20
44
31
Figure 4
Figures 6, 14, 15
155
1.03
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUFA75637P3, HUFA75637S3S Rev. B

HUFA75637S3S 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 44A

  • 30 毫歐 @ 44A，10V

  • 4V @ 250µA

  • 108nC @ 20V

  • 1700pF @ 25V

  • 155W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 管件

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