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HUFA75329S3S Datasheet

  • HUFA75329S3S

  • 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs

  • 10頁

  • FAIRCHILD

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HUFA75329G3, HUFA75329P3, HUFA75329S3S
Data Sheet
June 2002
49A, 55V, 0.024 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET廬 process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features
鈥?49A, 55V
鈥?/div>
Ultra Low On-Resistance,
r
DS(ON)
= 0.024鈩?/div>
鈥?Temperature Compensating PSPICE廬 and SABER鈩?/div>
Models
- Available on the web at: www.fairchildsemi.com
鈥?Thermal Impedance PSPICE and SABER Models
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUFA75329G3
HUFA75329P3
HUFA75329S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75329G
75329P
75329S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75329S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
GATE
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
漏2002 Fairchild Semiconductor Corporation
HUFA75329G3, HUFA75329P3, HUFA75329S3S Rev. A

HUFA75329S3S 產(chǎn)品屬性

  • High Voltage Switches for Power Processing

  • 50

  • 分離式半導體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標準型

  • 55V

  • 49A

  • 24 毫歐 @ 49A，10V

  • 4V @ 250µA

  • 75nC @ 20V

  • 1060pF @ 25V

  • 128W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 管件

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