HUFA75329D3, HUFA75329D3S
Data Sheet
June 1999
File Number
4426.4
20A, 55V, 0.026 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET廬 process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75329.
Features
鈥?20A, 55V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.Fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUFA75329D3
HUFA75329D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
75329D
75329D
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUFA75329D3ST.
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
DRAIN
(FLANGE)
SOURCE
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
漏2001 Fairchild Semiconductor Corporation
HUFA75329D3, HUFA75329D3S Rev. A
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