HUFA75321D3, HUFA75321D3S
Data Sheet
December 2001
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET廬 process. This
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Features
鈥?20A, 55V
鈥?Simulation Models
- Temperature Compensating PSPICE廬 and SABER鈩?/div>
Models
- Thermal Impedance SPICE and SABER Models
Available on the web at: www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUFA75321D3
HUFA75321D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
75321D
S
G
75321D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUFA75321D3ST.
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
GATE
DRAIN
(FLANGE)
SOURCE
DRAIN
(FLANGE)
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUFA75321D3, HUFA75321D3S Rev. B
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