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HUF76145S3S Datasheet

  • HUF76145S3S

  • 75A, 30V, 0.0045 Ohm, N-Channel, Logic Level UltraFET Power ...

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  • INTERSIL   INTERSIL

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HUF76145P3, HUF76145S3S
Data Sheet
September 1999
File Number
4401.7
75A, 30V, 0.0045 Ohm
,
N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET鈩?process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA76145.
Features
鈥?Logic Level Gate Drive
鈥?75A, 30V
鈥?Ultra Low On-Resistance, r
DS(ON)
= 0.0045鈩?/div>
鈥?Temperature Compensating PSPICE鈩?Model
鈥?Temperature Compensating SABER Model
鈥?Thermal Impedance SPICE Model
鈥?Thermal Impedance SABER Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
HUF76145P3
HUF76145S3S
PACKAGE
TO-220AB
TO-263AB
BRAND
76145P
76145S
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF76145S3ST.
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
6-178
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET鈩?is a Trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER漏 is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

HUF76145S3S 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 30 V

  • +/- 20 V

  • 75 A

  • 0.0045 Ohms

  • Single

  • + 150 C

  • SMD/SMT

  • TO-263AB

  • Tube

  • 38 ns

  • - 40 C

  • 270 W

  • 57 ns

  • 53 ns

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