HUF76107D3, HUF76107D3S
Data Sheet
January 2003
20A, 30V, 0.052 Ohm, N-Channel, Logic
Level UltraFET Power MOSFETs
These N-Channel power
MOSFETs are manufactured using
the innovative UltraFET鈩?process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is
capable of withstanding high energy in the avalanche mode
and the diode exhibits very low reverse recovery time and
stored charge. It was designed for use in applications
where power efficiency is important, such as switching
regulators, switching converters, motor drivers, relay
drivers, low voltage bus switches, and power management
in portable and battery operated products.
Formerly developmental type TA76107.
Features
鈥?Logic Level Gate Drive
鈥?20A, 30V
鈥?Ultra Low On-Resistance, r
DS(ON)
= 0.052鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Temperature Compensating SABER
漏
Model
鈥?Thermal Impedance SPICE Model
鈥?Thermal Impedance SABER Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
HUF76107D3
HUF76107D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
76107D
76107D
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76107D3ST.
G
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
漏2003 Fairchild Semiconductor Corporation
HUF76107D3, HUF76107D3S Rev. B1
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