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HUF75631P3 Datasheet

  • HUF75631P3

  • 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs

  • 10頁

  • FAIRCHILD

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上傳產(chǎn)品規(guī)格書

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HUF75631P3, HUF75631S3ST
Data Sheet
December 2001
33A, 100V, 0.040 Ohm, N-Channel,
UltraFET廬 Power MOSFETs
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
Features
鈥?Ultra Low On-Resistance
- r
DS(ON)
= 0.040鈩?
V
GS
=
10V
鈥?Simulation Models
- Temperature Compensated PSPICE廬 and SABER鈩?/div>
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
HUF75631P3
HUF75631S3ST
Symbol
D
Ordering Information
PART NUMBER
HUF75631P3
G
PACKAGE
TO-220AB
TO-263AB
BRAND
75631P
75631S
HUF75631S3ST
S
NOTE: When ordering, use the entire part number, e.g.,
HUF75631S3ST.
T
C
= 25
o
C, Unless Otherwise Specified
HUF75631P3
HUF75631S3ST
UNITS
V
V
V
A
A
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20k鈩? (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Continuous (T
C
= 100
o
C, V
GS
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
Power Dissipation 8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
NOTE:
1. T
J
= 25
o
C to 150
o
C.
100
100
鹵20
33
23
Figure 4
Figures 6, 14, 15
120
0.80
-55 to 175
300
260
W
W/
o
C
o
C
o
C
o
C
CAUTION:
Stresses above those listed in 鈥淎bsolute Maximum Ratings鈥?may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2001 Fairchild Semiconductor Corporation
HUF75631P3, HUF75631S3ST Rev. B

HUF75631P3 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 100V

  • 33A

  • 40 毫歐 @ 33A，10V

  • 4V @ 250µA

  • 79nC @ 20V

  • 1220pF @ 25V

  • 120W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

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