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HUF75343S3S Datasheet

  • HUF75343S3S

  • 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs

  • 10頁(yè)

  • FAIRCHILD

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HUF75343G3, HUF75343P3, HUF75343S3,
HUF75343S3S
Data Sheet
March 2003
75A, 55V, 0.009 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET廬 process. This
advanced process technology
achieves the lowest possible on-
resistance per silicon area, resulting in outstanding
performance. This device is capable of withstanding high
energy in the avalanche mode and the diode exhibits very
low reverse recovery time and stored charge. It was
designed for use in applications where power efficiency is
important, such as switching regulators, switching
converters, motor drivers, relay drivers, low-voltage bus
switches, and power management in portable and battery
operated products.
Formerly developmental type TA75343.
Features
鈥?75A, 55V
鈥?Simulation Models
- Temperature Compensating PSPICE廬 and SABER鈩?/div>
Models
- Thermal Impedance PSPICE鈩?and SABER Models
Available on the WEB at: www.fairchildsemi.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUF75343G3
HUF75343P3
HUF75343S3
HUF75343S3S
PACKAGE
TO-247
TO-220AB
TO-262AA
TO-263AB
BRAND
75343G
75343P
75343S
75343S
G
S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75343S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
JEDEC TO-262AA
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
For severe environments, see our Automotive HUFA series.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
漏2003 Fairchild Semiconductor Corporation
HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Rev. B1

HUF75343S3S 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 55V

  • 75A

  • 9 毫歐 @ 75A，10V

  • 4V @ 250µA

  • 205nC @ 20V

  • 3000pF @ 25V

  • 270W

  • 表面貼裝

  • TO-263-3，D²Pak（2 引線+接片），TO-263AB

  • D²PAK

  • 管件

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