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HUF75332S3S Datasheet

  • HUF75332S3S

  • 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs

  • 18頁

  • INTERSIL   INTERSIL

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HUF75332G3, HUF75332P3, HUF75332S3S
Data Sheet
June 1999
File Number
4489.3
60A, 55V, 0.019 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET鈩?process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75332.
Features
鈥?60A, 55V
鈥?Simulation Models
- Temperature Compensated PSPICE
廬
and SABER
漏
Models
- SPICE and SABER Thermal Impedance Models
Available on the WEB at: www.intersil.com
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUF75332G3
HUF75332P3
HUF75332S3S
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
75332G
75332P
75332S
S
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUF75332S3ST.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(TAB)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
94
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET鈩?is a trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER漏 is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

HUF75332S3S 產品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 55 V

  • +/- 20 V

  • 60 A

  • 0.019 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • TO-263AB

  • 45 ns

  • - 55 C

  • 145 W

  • 90 ns

  • 50 ns

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