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HUF75321D3S Datasheet

  • HUF75321D3S

  • 20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs

  • 9頁(yè)

  • INTERSIL   INTERSIL

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HUF75321D3, HUF75321D3S
Data Sheet
June 1999
File Number
4351.5
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET鈩?process.
This advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
ef鏗乧iency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Features
鈥?20A, 55V
鈥?Simulation Models
- Temperature Compensating PSPICE
廬
and SABER
漏
Models
- Thermal Impedance SPICE and SABER Models
Available on the WEB at:
www.semi.Intersil.com/families/models.htm
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
HUF75321D3
HUF75321D3S
PACKAGE
TO-251AA
TO-252AA
BRAND
75321D
75321D
G
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST.
S
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
58
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
UltraFET鈩?is a trademark of Intersil Corporation. PSPICE廬 is a registered trademark of MicroSim Corporation.
SABER漏 is a Copyright of Analogy, Inc. http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

HUF75321D3S 產(chǎn)品屬性

  • 1,800

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • UltraFET™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 55V

  • 20A

  • 36 毫歐 @ 20A，10V

  • 4V @ 250µA

  • 44nC @ 20V

  • 680pF @ 25V

  • 93W

  • 表面貼裝

  • TO-252-3，DPak（2 引線+接片），SC-63

  • D-Pak

  • 管件

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