Surface Mount Schottky Diodes
Reliability Data
HSMS-280X/1X/2X
HSMS-280A/1A/2A
The following cumulative test
results have been obtained from
testing performed at Hewlett-
Packard Communications Com-
ponents Division in accordance
with the latest revision of
MIL-STD-750. Data was gathered
from the product qualification,
reliability monitor, and
engineering evaluation.
For the purpose of this reliability
data sheet, a failure is any part
which fails to meet the electrical
and/or mechanical specification
listed in the Hewlett-Packard
Communications Components
Designer鈥檚 Catalog.
1. Life Test
A. Demonstrated Performance
Test
High Temp. Rev.
Bias (HTRB)
Operating Life
(O.L.)
High Temp.
Operating
Life (HTOL)
High Temp.
Storage (HTS)
Test Conditions
V
R
= 80% V
BR
, T
A
= 150擄C
T
A
= 25擄C, P
FM
= 250 mW
V
R
= 80% V
BR
, 60 Hz
10 mA DC, T
A
= 150擄C
Units
Tested
804
1,068
250
Total
Device Hrs.
828,045
999,884
251,900
Total
Failed
0
0
0
Failure Rate
1%/1K Hrs.
0
0
0
T
A
= 150擄C
2,917
1,836,660
0
0
B. Failure Rate Prediction
The failure rate will depend on the
junction temperature of the
device. The estimated life at
different temperatures is calcu-
lated, using the Arrhenius plot
with activation energy of 1.33 eV,
and listed in the following table.
Junction
Temp.
T
J
** (
擄
C)
150
140
130
120
100
75
50
Point
[1]
MTTF*
(Hours)
1.8 x 10
6
4.4 x 10
6
1.1 x 10
6
2.9 x 10
7
2.4 x 10
8
4.8 x 10
9
1.5 x 10
11
FIT
[3]
556.0
227.0
91.0
34.0
4.0
0.20
0.007
90% Confidence Level
[2]
MTTF
(Hours)
7.8 x 10
5
1.9 x 10
6
4.8 x 10
6
1.3 x 10
7
1.0 x 10
8
2.1 x 10
9
6.5 x 10
10
FIT
[3]
1282.0
526.0
208.0
77.0
10.0
0.48
0.015
*MTTF data collected in Hermetic and Plastic Packages.
**T
J
was calculated using a
胃
JA
of 500擄C/W.
(Notes on reverse side.)
1
2
3
4
