Beam Lead Schottky Diodes for
Mixers and Detectors
(1鈥?26 GHz)
Technical Data
HSCH-5300 Series
Features
鈥?Platinum Tri-Metal System
High Temperature Stability
鈥?Silicon Nitride Passivation
Stable, Reliable Performance
鈥?Low Noise Figure
Guaranteed 7.5 dB at 26 GHz
鈥?High Uniformity
Tightly Controlled Process
Insures Uniform RF
Characteristics
鈥?Rugged Construction
4 Grams Minimum Lead Pull
鈥?Low Capacitance
0.10 pF Max. at 0 V
鈥?Polyimide Scratch Protection
Outline 07
CATHODE
130 (5)
100 (4)
GOLD LEADS
135 (5)
90 (3)
135 (5)
90 (3)
225 (9)
200 (8)
310 (12)
250 (10)
225 (9)
170 (7)
12 (.5)
8 (.3)
30 MIN (1)
Description
These beam lead diodes are
constructed using a metal-
semiconductor Schottky barrier
junction. Advanced epitaxial
techniques and precise process
control insure uniformity and
repeatability of this planar
passivated microwave semicon-
ductor. A nitride passivation layer
provides immunity from
contaminants which could
otherwise lead to I
R
drift.
The Agilent beam lead process
allows for large beam anchor pads
for rugged construction (typical
6 gram pull strength) without
degrading capacitance.
SILICON
710 (28)
670 (26)
GLASS
60 (2)
40 (1)
DIMENSIONS IN
碌m
(1/1000 inch)
Maximum Ratings
Pulse Power Incident at T
A
= 25擄C .......................................................... 1 W
Pulse Width = 1
碌s,
Du = 0.001
CW Power Dissipation at T
A
= 25擄C ................................................ 150 mW
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
T
OPR
鈥?Operating Temperature Range ...............................-65擄C to +175
擄C
T
STG
鈥?Storage Temperature Range ....................................-65擄C to +200擄C
Minimum Lead Strength ........................................ 4 grams pull on any lead
Diode Mounting Temperature ............................... +350擄C for 10 sec. max.
These diodes are ESD sensitive. Handle with care to avoid static
discharge through the diode.
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