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HS9-65647RH-Q Datasheet

  • HS9-65647RH-Q

  • Radiation Hardened 8K x 8 SOS CMOS Static RAM

  • 16頁

  • INTERSIL   INTERSIL

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HS-65647RH
August 1995
Radiation Hardened
8K x 8 SOS CMOS Static RAM
Functional Diagram
AI
ROW
ROW
DECODER
128 X 512
MEMORY ARRAY
Features
鈥?1.2 Micron Radiation Hardened SOS CMOS
- Total Dose 3 x 10
5
RAD (Si)
- Transient Upset >1 x 10
11
RAD (Si)/s
- Single Event Upset < 1 x 10
-12
Errors/Bit-Day
鈥?Latch-up Free
鈥?LET Threshold >250 MEV/mg/cm2
鈥?Low Standby Supply Current 10mA (Max)
鈥?Low Operating Supply Current 100mA (2MHz)
鈥?Fast Access Time 50ns (Max), 35ns (Typ)
鈥?High Output Drive Capability
鈥?Gated Input Buffers (Gated by E2)
鈥?Six Transistor Memory Cell
鈥?Fully Static Design
鈥?Asynchronous Operation
鈥?CMOS Inputs
鈥?5V Single Power Supply
鈥?Military Temperature Range -55
o
C to +125
o
C
鈥?Industry Standard JEDEC Pinout
I/O0
INPUT
DATA
CIRCUIT
I/O7
E2
AI COL
COLUMN I/O
COLUMN DECODER
E1
G
W
CONTROL
CIRCUIT
TRUTH TABLE
E1
X
1
0
0
0
E2
0
1
1
1
1
G
X
X
1
0
X
W
X
X
1
1
0
MODE
Low Power Standby
Disabled
Enabled
Read
Write
Description
The Intersil HS-65647RH is a fully asynchronous 8K x 8
radiation hardened static RAM. This RAM is fabricated using
the Intersil 1.2 micron silicon-on-sapphire CMOS technology.
This technology gives exceptional hardness to all types of
radiation, including neutron 鏗倁ence, total ionizing dose, high
intensity ionizing dose rates, and cosmic rays.
Low power operation is provided by a fully static design. Low
standby power can be achieved without pull-up resistors,
due to the gated input buffer design.
Ordering Information
PART NUMBER
HS1-65647RH-Q
HS1-65647RH-8
HS1-65647RH/Proto
HS1-65647RH/Sample
HS9-65647RH-Q
HS9-65647RH-8
HS9-65647RH/Proto
HS9-65647RH/Sample
HS9A-65647RH-Q
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
-55
o
C to +125
o
C
28 Lead SBDIP
28 Lead SBDIP
28 Lead SBDIP
28 Lead SBDIP
28 Lead Ceramic Flatpack
28 Lead Ceramic Flatpack
28 Lead Ceramic Flatpack
28 Lead Ceramic Flatpack
36 Lead Ceramic Flatpack
DB NA
PACKAGE
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
Spec Number
File Number
824
518729
2928.2

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