HP4410DY Datasheet

IC型號：
HP4410DY
PDF描述：
10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MO...
文件大?。?/label>
86.25KB
PDF頁數(shù)：
5頁
芯片廠家：
INTERSIL

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HP4410DY

Data Sheet

August 1999

File Number

4468.4

10A, 30V, 0.0135 Ohm, Single N-Channel,

Logic Level Power MOSFET

This power MOSFET is manufactured using an innovative

process. This advanced process technology achieves the

lowest possible on-resistance per silicon area, resulting in

outstanding performance. This device is capable of

withstanding high energy in the avalanche mode and the

diode exhibits very low reverse recovery time and stored

charge. It was designed for use in applications where power

ef鏗乧iency is important, such as switching regulators,

switching converters, motor drivers, relay drivers, low-

voltage bus switches, and power management in portable

and battery-operated products.

Features

鈥?Logic Level Gate Drive

鈥?10A, 30V

鈥?r

DS(ON)

= 0.0135鈩?at I

= 10A, V

= 10V

鈥?r

DS(ON)

= 0.020鈩?at I

= 8A, V

= 4.5V

鈥?Related Literature

- TB334, 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

HP4410DY

PACKAGE

SO-8

BRAND

P4410DY

SOURCE(1)

DRAIN(8)

SOURCE(2)

DRAIN(7)

NOTE: When ordering, use the entire part number. Add the suf鏗亁 T

to obtain the variant in tape and reel, e.g., HP4410DYT.

SOURCE(3)

DRAIN(6)

GATE(4)

DRAIN(5)

Packaging

SO-8

8-3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

制造商
Fairchild Semiconductor
晶體管極性
N-Channel
汲極/源極擊穿電壓
30 V
閘/源擊穿電壓
+/- 16 V
漏極連續(xù)電流
10 A
電阻汲極/源極 RDS（導(dǎo)通）
0.0135 Ohms
配置
Single Quad Drain Triple Source
最大工作溫度
+ 150 C
安裝風(fēng)格
SMD/SMT
封裝 / 箱體
SOIC-8 Narrow
封裝
Tube
下降時間
20 ns
最小工作溫度
- 55 C
功率耗散
2.5 W
上升時間
9 ns
典型關(guān)閉延遲時間
70 ns

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