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HN28F101P-12 Datasheet

  • HN28F101P-12

  • 131072-word ?? 8-bit CMOS Flash Memory

  • 18頁

  • ETC

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HN28F101 Series
131072-word
脳
8-bit CMOS Flash Memory
The Hitachi HN28F101 is a 131072-word x 8-bit
CMOS flash Memory, realizing on-board
programming. It programs or erases data with only
on-board power supply (12 V V
PP
supply/5 V
V
CC
supply). It programs data with fast program-
ming algorithm by command inputs. It has two
types of erase algorithm : automatic erase and fast
erase by command inputs. Automatic erase func-
tion can erase data automatically without external
control only by inputting trigger pulse and inform
erase completion to CPU by status polling. The
HN28F101 can control programming erase
algorithm externally.
鈥?Erasing endurance: 10,000 times
鈥?Pin arrangement: 32-pin JEDEC standard
鈥?Package
32-pin DIP
32-pin SOP
32-pin TSOP
32-pin PLCC
Ordering Information
Type No.
Access time Package
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101P-12
120 ns
32-pin plastic
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?DIP
HN28F101P-15
150 ns
(DP-32)
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101P-20
200 ns
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101FP-12
120 ns
32-pin plastic
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?SOP
HN28F101FP-15
150 ns
(FP-32D)
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101FP-20
200 ns
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HN28F101T-12
120 ns
32-pin plastic
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?TSOP
HN28F101T-15
150 ns
(TFP-32DA)
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101T-20
200 ns
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€撯€斺€斺€斺€斺€斺€?/div>
HN28F101R-12
120 ns
32-pin plastic
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?TSOP
HN28F101R-15
150 ns
(TFP-32DAR)
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101R-20
200 ns
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101CP-12
120 ns
32-pin
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?PLCC
HN28F101CP-15
150 ns
(CP-32)
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
HN28F101CP-20
200 ns
鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>
Features
鈥?On-board power supply (V
CC
/V
PP
)
V
CC
= 5 V 鹵 10%
V
PP
= V
SS
to V
CC
(Read)
V
PP
= 12.0 V 鹵 0.6 V (Erase/Program)
鈥?Fast access time
120 ns/150 ns/200 ns (max)
鈥?Programming function
Byte programming
Programming time: 25 碌s typ/byte
Address, data, control latch function
鈥?On-board automatic erase function
Chip erase
Erase time: 1 s typ
Address, data, control latch function
Status polling function
鈥?Low power dissipation
I
CC
= 10 mA typ (Read)
I
CC
= 20 碌A max (Standby)
I
PP
= 30 mA typ (Auto erase/Program)
I
PP
= 20 碌A max (Read/Standby)

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