v04.1203
MICROWAVE CORPORATION
HMC326MS8G
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5.0V
Ultra Small Package: MSOP8G
8
AMPLIFIERS - SMT
Typical Applications
The HMC326MS8G is ideal for:
鈥?Microwave Radios
鈥?Broadband Radio Systems
鈥?Wireless Local Loop Driver Ampli鏗乪r
Functional Diagram
General Description
The HMC326MS8G is a high ef鏗乧iency GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC driver
ampli鏗乪r which operates between 3.0 and 4.5 GHz.
The ampli鏗乪r is packaged in a low cost, surface mount
8 leaded package with an exposed base for improved
RF and thermal performance. The ampli鏗乪r provides
21 dB of gain and +26 dBm of saturated power from
a +5.0V supply voltage. Power down capability is
available to conserve current consumption when the
ampli鏗乪r is not in use. Internal circuit matching was
optimized to provide greater than 40% PAE.
Electrical Speci鏗乧ations,
T
A
= +25擄 C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
tOn/tOff
Vpd = 0V / 5V
32
21
18
Min.
Typ.
3.0 - 4.5
21
0.025
12
7
23.5
26
36
5
0.001 / 130
7
10
0.035
Max.
Units
GHz
dB
dB /
擄C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
8 - 98
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order Online at www.hittite.com
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