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HCTS30KMSR Datasheet

  • HCTS30KMSR

  • Radiation Hardened 8-Input NAND Gate

  • 10頁

  • INTERSIL   INTERSIL

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HCTS30MS
August 1995
Radiation Hardened
8-Input NAND Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T14
TOP VIEW
A 1
B 2
C 3
D 4
E 5
F 6
GND 7
14 VCC
13 NC
12 H
11 G
10 NC
9 NC
8 Y
Features
鈥?3 Micron Radiation Hardened SOS CMOS
鈥?Total Dose 200K RAD (Si)
鈥?SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
鈥?Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
鈥?Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
鈥?Dose Rate Upset >10
10
RAD (Si)/s 20ns Pulse
鈥?Latch-Up Free Under Any Conditions
鈥?Military Temperature Range: -55
o
C to +125
o
C
鈥?Signi鏗乧ant Power Reduction Compared to LSTTL ICs
鈥?DC Operating Voltage Range: 4.5V to 5.5V
鈥?LSTTL Input Compatibility
- VIL = 0.8V Max
- VIH = VCC/2 Min
鈥?Input Current Levels Ii
鈮?/div>
5碌A(chǔ) at VOL, VOH
14 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP3-F14
TOP VIEW
A
1
2
3
4
5
6
7
14
13
12
11
10
9
8
VCC
NC
H
G
NC
NC
Y
Description
The Intersil HCTS30MS is a Radiation Hardened 8-Input
NAND Gate. A high on all input forces the output to a low
state.
The HCTS30MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
B
C
D
E
F
GND
Ordering Information
PART NUMBER
HCTS30DMSR
HCTS30KMSR
HCTS30D/Sample
HCTS30K/Sample
HCTS30HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
14 Lead SBDIP
14 Lead Ceramic Flatpack
14 Lead SBDIP
14 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
Spec Number
File Number
440
518639
3056.1

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