PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
DESCRIPTION
The H11AG series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
H11AG2
H11AG3
6
1
6
SCHEMATIC
FEATURES
鈥?High efficiency low degradation liquid epitaxial IRED
鈥?Logic level compatible, input and output currents, with
CMOS and LS/TTL
鈥?High DC current transfer ratio at low input currents
鈥?Underwriters Laboratory (UL) recognized File #E90700
1
ANODE 1
6 BASE
6
1
CATHODE 2
5 COL
APPLICATIONS
鈥?CMOS driven solid state reliability
鈥?Telephone ring detector
鈥?Digital logic isolation
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameters
TOTAL DEVICE
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ 25擄C (LED plus detector)
Derate Linearly From 25擄C
EMITTER
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (1 碌s pulse, 300 pps)
LED Power Dissipation 25擄C Ambient
Derate Linearly From 25擄C
DETECTOR
Detector Power Dissipation @ 25擄C
Derate Linearly from 25擄C
Continuous Collector Current
P
D
All
All
150
2.0
50
mW
mW/擄C
mA
Symbol
T
STG
T
OPR
T
SOL
P
D
I
F
V
R
I
F
(pk)
P
D
Device
All
All
All
All
All
All
All
All
Value
-55 to +150
-55 to +100
260 for 10 sec
260
3.5
50
6
3.0
75
1.0
Units
擄C
擄C
擄C
mW
mW/擄C
mA
V
A
mW
mW/擄C
錚?/div>
2001 Fairchild Semiconductor Corporation
DS300213
1/28/02
1 OF 8
www.fairchildsemi.com
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