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H05N50 Datasheet

  • H05N50

  • N-CHANNEL POWER MOSFET

  • 48.84KB

  • 4頁(yè)

  • HSMC

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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200601
Issued Date : 2006.02.01
Revised Date : 2006.02.20
Page No. : 1/4
H05N50 Series
N-CHANNEL POWER MOSFET
H05N50 Series Pin Assignment
Tab
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This N - Channel MOSFETs provide the designer with the best
combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
2
3
1
Features
鈥?/div>
Dynamic dv/dt Rating
鈥?/div>
Repetitive Avalanche Rated
鈥?/div>
Fast Switching
鈥?/div>
Ease of Paralleling
鈥?/div>
Simple Drive Requirements
1
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
Thermal Characteristics
Symbol
R胃
JC
R胃
JA
Parameter
Thermal Resistance
Junction to Case Max.
Thermal Resistance
Junction to Ambient Max.
Value
TO-220AB
TO-220FP
62
1.71
3.3
Units
擄C/W
擄C/W
H05N50 Series Symbol
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
Drain-Source Voltage
Drain to Current (Continuous)
Drain to Current (Pulsed) (*1)
Gate-to-Source Voltage (Continue)
Total Power Dissipation
TO-220AB
TO-220FP
Derate above 25擄C
TO-220AB
TO-220FP
Single Pulse Avalanche Energy (*2)
Avalanche Current (*1)
Repetitive Avalanche Energy (*1)
Peak Diode Recovery (*3)
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?from
case for 10 seconds
Parameter
Value
500
5
20
鹵30
80
38
0.59
0.3
300
5
7.4
5
-55 to 150
-55 to 150
300
Units
V
A
A
V
W
P
D
W/擄C
mJ
A
mJ
V/ns
擄C
擄C
擄C
E
AS
I
AR
E
AR
d
v
/d
t
T
j
T
stg
T
L
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: V
DD
=50V, starting T
j
=25擄C, L=24mH, R
G
=25鈩? I
AS
=4.5A
*3: I
SD
鈮?.5A,
di/dt鈮?5A/us, V
DD
鈮
(BR)DSS
, T
J
鈮?50擄C
H05N50E, H05N50F
HSMC Product Specification

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