HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
H02N60S Series Pin Assignment
Tab
1
2
3
3-Lead Plastic
TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic
TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Tab
Tab
1
2
3
3-Lead Plastic
TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
2
3
1
Features
鈥?/div>
Robust High Voltage Termination
鈥?/div>
Avalanc he Energy Specified
鈥?/div>
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
鈥?/div>
Diode is Characterized for Use in Bridge Circuits
鈥?/div>
I
DSS
and V
DS(on)
Specified at Elevated Temperature
3-Lead Plastic
TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
1
2
3
D
G
S
H02N60S Series
Symbol:
Absolute Maximum Ratings
Symbol
I
D
I
DM
V
GS
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (T
C
=25
o
C)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
P
D
H02N60SF (TO-220FP)
Derate above 25擄C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
T
j
, T
stg
E
AS
T
L
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25擄C
(V
DD
=100V, V
GS
=10V, I
L
=2A, L=10mH, R
G
=25鈩?
Maximum Lead Temperature for Soldering Purposes, 1/8鈥?/div>
from case for 10 seconds
0.4
0.4
0.33
-55 to 150
35
260
50
50
25
Value
2
8
鹵30
Units
A
A
V
W
W/擄C
擄C
mJ
擄C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
H02N60SE相關型號PDF文件下載
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英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
-
英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
-
英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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英文版
N-Channel Power Field Effect Transistor
HSMC
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英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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英文版
N-Channel Power Field Effect Transistor
HSMC
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英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
-
英文版
N-Channel Power Field Effect Transistor
HSMC
-
英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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英文版
N-Channel Power Field Effect Transistor
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英文版
N-Channel Power Field Effect Transistor
HSMC [Hi-S...
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