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GVT73128S24T-12 Datasheet

  • GVT73128S24T-12

  • x24 SRAM

  • 64.00KB

  • 14頁(yè)

  • ETC

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GALVANTECH
, INC.
ASYNCHRONOUS
SRAM
FEATURES
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Fast access times: 9, 10, 12 and 15ns
Fast OE# access times: 4, 5, 6 and 7ns
Single +3.3V+0.3V power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Easy memory expansion with CE#, CE1#, CE2 and OE#
options
Automatic chip deselect power down
High-performance, low-power consumption, CMOS,
double-metal process
Low profile 100 pin TQFP and 119 bump, 14mm x 22mm
PBGA (Ball Grid Array) packages
Multiple Ground and VCC pins for maximum noise
immunity
GVT73128A24/GVT73128S24
128K X 24 ASYNCHRONOUS SRAM
128K x 24 SRAM
+3.3V SUPPLY, THREE MEGABIT
THREE CHIP ENABLES
GENERAL DESCRIPTION
The GVT73128A24 and GVT73128S24 are organized as
a 131,072 x 24 SRAM using a four-transistor memory cell
with a high performance, silicon gate, low-power CMOS
process. Galvantech SRAMs are fabricated using triple-layer
polysilicon, double-layer metal technology.
This device offers multiple power and ground pins for
improved performance and noise immunity. For increased
system flexibility and eliminating bus contention problems,
this device offers multiple chip enables (CE#, CE1# and
CE2), and output enable (OE#) with this organization. For
GVT73128S24 device in 100-pin TQFP package, separate
byte enables (BE0#, BE1#, and BE2#) are also available to
control individual bytes.
Writing to the device is accomplished by bringing Chip
Enables (CE# and CE1#) and Write Enable (WE#) inputs
LOW and CE2 HIGH. Reading from the device is
accomplished by bringing Chip Enables (CE# and CE1#)
LOW and bringing CE2 and Write Enable (WE#) inputs
HIGH, along with Output Enable (OE#) being asserted LOW.
The device offers a low power standby mode when chip
is not selected. This allows system designers to meet low
standby power requirements.
OPTIONS
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Timing
9ns access
10ns access
12ns access
15ns access
Packages
100-pin TQFP
119-lead BGA
Temperature
Commercial
Industrial
MARKING
-9
-10
-12
-15
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None
I
(
0擄C
to
70擄C)
(
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Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699 Web Site www.galvantech.com
Rev. 8/99
Galvantech, Inc. reserves the right to chang e
products or specifications without notice.

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