鈥?/div>
Fast access times: 10, 12, 15and 20ns
Fast OE# access times: 5, 6, 7 and 8ns
Single +5V +10% power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Center power and ground pins for greater noise immunity
Easy memory expansion with CE# and OE# options
Automatic CE# power down
High-performance, low-power consumption, CMOS
double-poly, double-metal process
Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil
TSOP
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
64K x 16 SRAM
WITH SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
GENERAL DESCRIPTIO N
The GVT7264A16 is organized as a 65,536 x 16 SRAM
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#), separate byte
enable controls (BLE# and BHE#) and output enable (OE#)
with this organization.
The device offers a low power standby mode when chip
is not selected. This allows system designers to meet low
standby power requirements.
OPTIONS
鈥?/div>
Timing
10ns access
12ns access
15ns access
20ns access
Packages
44-pin SOJ (400 mil)
44-pin TSOP (400 mil)
Power consumption
Standard
Low
Temperature
Commercial
Industrial
MARKING
-10
-12
-15
-20
PIN ASSIGNMENT
44-Pin SOJ
44-Pin TSOP
A4
A3
A2
A1
A0
CE#
DQ1
DQ2
DQ3
DQ4
VCC
VSS
DQ5
DQ6
DQ7
DQ8
WE#
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
鈥?/div>
J
TS
鈥?/div>
None
L
鈥?/div>
鈥?/div>
None
I
(
0擄C
to
70擄C)
(
-40擄C
to
85擄C)
鈥?/div>
A5
A6
A7
OE#
BHE#
BLE#
DQ16
DQ15
DQ14
DQ13
VSS
VCC
DQ12
DQ11
DQ10
DQ9
NC
A8
A9
A10
A11
NC
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699 Web Site: http://www.galvantech.com
Rev. 1/99
Galvantech, Inc. reserves the right to chang
e
products or specifications without notice
.
GVT7264A16TS-12I相關(guān)型號(hào)PDF文件下載
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英文版
TRADITIONAL PINOUT 32K X 8 SRAM
Galvantech
-
英文版
32K X 36 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
32K X 32 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 36 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 32 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 36 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 64 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS TAG SRAM
Galvantech
-
英文版
TRADITIONAL PINOUT 128K X 8 SRAM
Galvantech
-
英文版
TRADITIONAL PINOUT 256K X 4
Galvantech
-
英文版
REVOLUTIONARY PINOUT 128K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 512K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 64K X 16
Galvantech
-
英文版
REVOLUTIONARY PINOUT 128K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 512K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 64K X 16
Galvantech
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