鈥?/div>
Fast access times: 12, 15 and 20ns
Fast OE# access times: 6, 7 and 8ns
Single +5V +10% power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Center power and ground pins for greater noise immunity
JEDEC standard for functionality and revolutionary pinout
Easy memory expansion with CE# and OE# options
Automatic CE# power down
High-performance, low-power consumption, CMOS
double-poly, double-metal process
GVT72512A8
REVOLUTIONARY PINOUT 512K X 8
512K x 8 SRAM
+5V SUPPLY
REVOLUTIONARY PINOUT
GENERAL DESCRIPTIO N
The GVT72512A8 is organized as a 524,288 x 8 SRAM
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#) and output
enable (OE#) with this organization.
Writing to these devices is accomplished when write
enable (WE#) and chip enable (CE#) inputs are both LOW.
Reading is accomplished when (CE#) and (OE#) go LOW
with (WE#) remaining HIGH. The device offers a low power
standby mode when chip is not selected. This allows system
designers to meet low standby power requirements.
OPTIONS
鈥?/div>
Timing
12ns access
15ns access
20ns access
Packages
36-pin SOJ (400 mil)
Power consumption
Standard
Low
Temperature
Commercial
Industrial
MARKING
-12
-15
-20
鈥?/div>
J
鈥?/div>
PIN ASSIGNMENT
36-Pin SOJ
A0
A1
A2
A3
A4
CE#
DQ1
DQ2
VCC
VSS
DQ3
DQ4
WE#
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
None
L
鈥?/div>
鈥?/div>
None
I
(
0擄C
to
70擄C)
(
-40擄C
to
85擄C)
鈥?/div>
NC
A18
A17
A16
A15
OE#
DQ8
DQ7
VSS
VCC
DQ6
DQ5
A14
A13
A12
A11
A10
NC
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699 Web Site http://www.galvantech.com
Rev. 1/99
Galvantech, Inc. reserves the right to chang
e
products or specifications without notice
.
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英文版
TRADITIONAL PINOUT 32K X 8 SRAM
Galvantech
-
英文版
32K X 36 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
32K X 32 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 36 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 32 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 36 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 64 SYNCHRONOUS BURST SRAM
Galvantech
-
英文版
64K X 18 SYNCHRONOUS TAG SRAM
Galvantech
-
英文版
TRADITIONAL PINOUT 128K X 8 SRAM
Galvantech
-
英文版
TRADITIONAL PINOUT 256K X 4
Galvantech
-
英文版
REVOLUTIONARY PINOUT 128K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 512K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 64K X 16
Galvantech
-
英文版
REVOLUTIONARY PINOUT 128K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 512K X 8
Galvantech
-
英文版
REVOLUTIONARY PINOUT 64K X 16
Galvantech
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