音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

GT28F320D18B120 Datasheet

  • GT28F320D18B120

  • x16 Flash EEPROM

  • 83頁

  • ETC

掃碼查看芯片數(shù)據(jù)手冊

上傳產(chǎn)品規(guī)格書

PDF預(yù)覽

1.8 Volt Intel
廬
Dual-Plane Flash Memory
28F320D18 (x16)
Product Preview Datasheet
Product Features
s
s
s
s
s
s
s
32-Mbit density with 16-Bit Data Bus
High Performance Reads
鈥?110/40 ns 4-Word Page Mode
鈥?40 MHz (110/20 ns) Zero Wait-State
Synchronous Burst Mode
Dual Partition Architecture
鈥?25%/75% Partition Sizes
32 Mb
鈬?/div>
8 Mb + 24 Mb
鈥?Program or Erase during Reads
鈥?Status Register for Each Partition
Low Power Operation
鈥?1.8 V Read and Write Operations
鈥?V
CCQ
for I/O Isolation and System
Compatibility
鈥?Automatic Power Savings Mode
Enhanced Code + Data Storage
鈥?Flash Data Integrator (FDI) Software
Optimized
鈥?5 碌s Typical Program/Erase Suspends
128-Bit Protection Register
鈥?64 Unique Device Identifier Bits
鈥?64 User-Programmable OTP Bits
碌BGA* CSP 60-Ball 7x8 Matrix (four support
balls)
s
s
s
s
s
s
s
Flexible Blocking Architecture
鈥?Eight, 4-Kword Parameter Code/Data Blocks
鈥?Sixty-three, 32-Kword Main Code/Data
Blocks
Enhanced Data Protection
鈥?V
PP
= GND
鈬?/div>
Absolute Write Protection
鈥?Erase/Program Lockout during Power
Transitions
鈥?Individual Dynamic Zero-Latency Block
Locking
鈥?Individual Block Lock-Down
Automated Program/Erase Algorithms
鈥?1.8 V Low-Power 22 碌s/Word (Typ)
Programming
鈥?12 V No Glue Logic 8 碌s/Word (Typ)
Production Programming and 1.1 sec Erase
(Typ)
Cross-Compatible Command Support
鈥?Intel Basic Command Set
鈥?Common Flash Interface (CFI)
Extended Temperature 鈥?0擄 C to +85擄 C
Minimum 100,000 Block Erase Cycles
ETOX鈩?VI Flash Technology (0.25 碌m)
The 1.8 Volt Intel
廬
Dual-Plane Flash memory provides high performance asynchronous and synchronous
burst reads. It is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash
memory鈥檚 intrinsic nonvolatility, 1.8 Volt Dual-Plane Flash memory eliminates the traditional system-
performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster
execution memory. It reduces the total memory requirement that increase reliability and reduces overall
system power consumption and cost.
The 1.8 Volt Dual-Plane Flash memory鈥檚 two partitions allow background programming or erasing to occur
in one partition while program-execution reads take place in the other partition. This allows for higher data
write throughput compared to single partition architectures. The dual partition architecture also allows two
processors to interleave code operations while program and erase operations take place in the background.
1.8 Volt Dual-Plane Flash memory is manufactured on Intel
廬
0.25 碌m ETOX鈩?VI process technology. It is
available in an industry-standard 碌BGA* CSP package which is ideal for board-constrained applications.
Order Number: 290672-002
October 1999

GT28F320D18B120相關(guān)型號PDF文件下載

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務(wù)：
賣家服務(wù)：
技術(shù)客服：

0571-85317607

網(wǎng)站技術(shù)支持

13606545031

客服在線時間周一至周五
9:00-17:30

關(guān)注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務(wù)的動力！意見一經(jīng)采納，將有感恩紅包奉上哦！