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GS882V37AD-250I Datasheet

  • GS882V37AD-250I

  • 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

  • 28頁

  • GSI

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GS882V37AB/D-250/225/200
119- and 165-Bump BGA
Commercial Temp
Industrial Temp
Features
256K x 36
9Mb SCD/DCD Sync Burst SRAMs
250 MHz鈥?00MHz
1.8 V V
DD
1.8 V I/O
鈥?Single/Dual Cycle Deselect selectable
鈥?IEEE 1149.1 JTAG-compatible Boundary Scan
鈥?ZQ mode pin for user-selectable high/low output drive
鈥?1.8 V +10%/鈥?0% core power supply
鈥?1.8 V I/O supply
鈥?LBO pin for Linear or Interleaved Burst mode
鈥?Internal input resistors on mode pins allow floating mode pins
鈥?Default to SCD x36 Interleaved Pipeline mode
鈥?Byte Write (BW) and/or Global Write (GW) operation
鈥?Internal self-timed write cycle
鈥?Automatic power-down for portable applications
鈥?JEDEC-standard 119-bump and 165-bump BGA packages
SCD and DCD Pipelined Reads
The GS882V37AB/D is an SCD (Single Cycle Deselect) and
DCD (Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive鈩?/div>
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS882V37AB/D operates on a 1.8 V power supply. All input
are 1.8 V compatible. Separate output power (V
DDQ
) pins are used
to decouple output noise from the internal circuits and are 1.8 V
compatible.
Functional Description
Applications
The GS882V37AB/D is a 9,437,184-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Parameter Synopsis
Pipeline
3-1-1-1
1.8 V
t
KQ
tCycle
Curr (x36)
-250
2.0
4.0
320
-225
2.2
4.4
295
-200
2.5
5.0
265
Unit
ns
ns
mA
Rev: 1.02 7/2004
1/28
漏 2002, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS882V37AD-250I相關(guān)型號PDF文件下載

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  • 英文版
    256K x 36 9Mb Sync Burst SRAM
    GSI [GSI T...
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    512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs
    GSI [GSI T...
  • 英文版
    GSI Technology [512K x 18, 256K x 36 8Mb Sync Burst SRAMs]
    GSI
  • 英文版
    512K x 18, 256K x 36 9Mb Synchronous Burst SRAMs
    GSI [GSI Techno...
  • 英文版
    512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
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  • 英文版
    512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
    GSI [GSI Techno...
  • 英文版
    9Mb Pipelined and Flow Through Synchronous NBT SRAM
    ETC
  • 英文版
    9Mb Pipelined and Flow Through Synchronous NBT SRAM
    ETC [ETC]
  • 英文版
    GSI Technology [8Mb Pipelined and Flow Through Synchronous ...
    GSI
  • 英文版
    GSI Technology [512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst...
    GSI
  • 英文版
    GSI Technology [256K x 36 9Mb Synchronous Burst SRAMs]
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    256K x 36 9Mb SCD/DCD Sync Burst SRAM
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