GaAs MMICs
GN1010
GN1010
GaAs N-Channel MES IC
For high-output high-gain amplification
0.65鹵0.15
Unit : mm
+0.2
2.8
鈥?.3
1.5
鈥?.3
+0.2
0.65鹵0.15
s
Features
0.95
q
q
q
General-use wide-band amplifier
2.9鹵0.2
0.5R
1.9鹵0.2
4
1
0.95
Low noise
With bandwidth control pin
3
2
+0.2
1.1
鈥?.1
s
Absolute Maximum Ratings
(Ta = 25藲C)
Parameter
Power supply voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
D
I
G
P
D
T
ch
T
stg
Rating
6
鈥?
45
3
200
150
鈥?55 to +150
Unit
V
V
mA
mA
mW
藲C
藲C
1 : Source
2 : Drain
3:C
4 : Gate
Mini Type Package (4-pin)
s
Equivalent Circuit
2
3
4
0 to 0.1
0.4鹵0.2
0.8
1
s
Electrical Characteristics
(Ta = 25藲C)
Parameter
Drain current
Noise figure
Power gain
I
dB
compression output
Symbol
I
DD * 1
NF
* 2
PG
* 2
P
O * 2
V
DS
= 3V
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
V
DS
= 3V, f= 0.5GHz
V
DS
= 3V, f=1.8GHz
5
8
Condition
Min
5
Typ
30
2
10
9
15
Max
45
3
Unit
mA
dB
dB
dBm
*1
I
DD
rank classification
Rank
I
DD
(mA)
P
5 to 20
Q
15 to 30
R
25 to 45
*2
NF, PG, P
O
test circuit
V
D
C = 1000 pF
Cc = 200 pF
Cf = 27 pF
Cc
C
C
Cf
Cc
G
S
0.16
鈥?.06
+0.1
0.4
鈥?.05
+0.1
1
2
