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Lower Series Resistance and Higher Q in
Comparison to Equivalent Silicon
Hyperabrupt Varactors
Flip Chip
Chip
Outline Drawings
Description
This series of GaAs hyperabrupt varactor diodes features
a constant gamma of 1.0 and 1.25, which allows for a
relatively linear frequency tuning for VCOs, modulators and
tunable filters. Varactors in this series are grown by MBE
(Molecular Beam Epitaxy), which allows monolayer
control of the doping profile.This translates to superb wafer-
to-wafer uniformity. The series resistance is lower, and Q
is higher when compared to an equivalent silicon
hyperabrupt varactor. These diodes are suited for
applications at X band frequencies and above, where wide
change in frequency is desired. However, in certain
applications the GaAs hyperabrupt varactor exhibits a
higher surface noise in comparison to an equivalent silicon
varactor.
540-011
0.026 (0.66 mm)
鹵 0.001 (0.025 mm)
0.013 (0.33 mm)
鹵 0.001 (0.025 mm)
0.008 (0.20 mm)
鹵 0.001 (0.025 mm)
0.013 (0.33 mm)
鹵 0.001 (0.025 mm)
0.005 (0.13 mm)
鹵 0.001 (0.025 mm)
0.004 (0.10 mm)
鹵 0.001 (0.025 mm)
MAX.
Absolute Maximum Ratings
Characteristic
Reverse Voltage (V
R
)
Forward Current (I
F
)
Power Dissipation at 25擄C
Operating Temperature (T
OP
)
Storage Temperature (T
ST
)
Value
18 V
100 mA
250 mW
-55擄C to +150擄C
-65擄C to +200擄C
150-808
METALLIZED GOLD DOT
0.0011 (0.0279 mm)
MIN. DIA.
0.010 (0.25 mm)
鹵 0.001 (0.025 mm)
0.010 (0.25 mm)
鹵 0.001 (0.025 mm)
METALLIZED BACK
CONTACT GOLD
0.005 (0.13 mm) NOM.
Skyworks Solutions, Inc.
[781] 376-3000
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Fax
[781] 376-3100
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Email
sales@skyworksinc.com
鈥?/div>
www.skyworksinc.com
Specifications subject to change without notice. 5/03A
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