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GM76V8128CLLST-85I Datasheet

  • GM76V8128CLLST-85I

  • x8 SRAM

  • 11頁

  • ETC

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LG Semicon Co.,Ltd.
Description
The GM76V8128CL/CLL is a 1,048,576 bits static
random access memory organized as 131,072 words
by 8 bits. Using a 0.6um advanced CMOS technology
and it provides high speed operation with minimum
cycle time of 70/85ns. The device is placed in a low
power standby mode with /CS1 high or CS2 low and
the output enable (/OE) allows fast memory access.
Thus it is suitable for high speed and low power
applications, especially where battery back-up is
required.
GM76V8128CL/CLL
131,072 WORDS x 8 BIT
CMOS STATIC RAM
Pin Configuration
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
CC
A15
CS2
/WE
A13
A8
A9
A11
/OE
A10
/CS1
I/O7
I/O6
I/O5
I/O4
I/O3
Features
* Fast Speed : 70/85ns
* Low Power Standby and Low Power Operation
Standby : 72uW Max. at T
A
= - 40 ~ 85C(LLE/LLI)
108uW Max. at T
A
= - 40 ~ 85C(LE/LI)
72uW Max. at T
A
= 0 ~ 70C(LL)
180uW Max. at T
A
= 0 ~ 70C(L)
Operation : 144mW (Max)
* Completely Static RAM : No Clock or Timing
Strobe Required
* Equal Access and Cycle Time
* TTL compatible inputs and outputs
* Capability of Battery Back-up Operation
* Single + 3.3V+/-0.3V Operation
* Standard 32 DIP, SOP and TSOP-I,STSOP-I
A0
* Temperature Range
A1
Commercial(0
隆-
70C) : GM76V8128C
A2
Extended (-25 ~ 85C) : GM76V8128C-E
Industrial (-40 ~ 85C) : GM76V8128C-I
(Top View)
Block Diagram
........
Address
Buffer
10
1024 MEMORY CELL ARRAY
X
1024 x 128 x 8
Decoder
(128K x 8)
Pin Description
Pin
A0-A16
/WE
/CS1, CS2
/OE
I/O0-I/O7
V
CC
V
SS
NC
Function
Address Inputs
Write Enable Input
Chip Select Input
Output Enable Input
Data Inputs/Outputs
/OE
/CS1
CS2
A14
A15
A16
128 x 8
7
Y
Decorder
128
Column Select
/CS1, CS2
Chip
Control
8
/OE, /WE
Chip
Control
Power Supply (3.0V ~3.6V)
Ground
I/O Buffer
/WE
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
97
I/O7
No Connection

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