GM71V65163C
GM71VS65163CL
4,196,304 WORDS x 16 BIT
MOS DYNAMIC RAM
Description
The GM71V(S)65163C/CL is the new generation
dynamic RAM organized 4,196,304 words by 16
bits. The GM71V(S)65163C/CL utilizes advanced
CMOS Silicon Gate Process Technology as well as
advanced circuit techniques for wide operating
margins, both internally and to the system user.
System oriented features include single power supply
of 3.3V+/-10% tolerance, direct interfacing
capability with high performance logic families such
as Schottky TTL.
The GM71V(S)65163C/CL offers Extended Data
Out(EDO) Mode as a high speed access mode.
Pin Configuration
50 SOJ / TSOP-II
VCC
IO0
IO1
IO2
IO3
VCC
IO4
IO5
IO6
IO7
NC
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
VSS
IO15
IO14
IO13
IO12
VSS
IO11
IO10
IO9
IO8
NC
VSS
/LCAS
/UCAS
/OE
NC
NC
NC
A11
A10
A9
A8
A7
A6
VSS
Features
* 4,196,304 Words x 16 Bit
* Extended Data Out (EDO) Mode Capability
* Fast Access Time & Cycle Time
(Unit: ns)
/WE
/RAS
NC
NC
NC
NC
A0
A1
t
RAC
GM71V(S)65163C/CL-5
GM71V(S)65163C/CL-6
50
60
t
AA
25
30
t
CAC
13
15
t
RC
90
110
t
HPC
20
25
A2
A3
A4
A5
VCC
*Power dissipation
- Active : 540mW/504mW(MAX)
- Standby : 1.8 mW ( CMOS level : MAX )
0.54mW ( L-Version : MAX)
*EDO page mode capability
*Access time : 50ns/60ns (max)
*Refresh cycles
- RAS only Refresh
4096 cycles/64 ms (GM71V65163C)
4096 cycles/128ms (GM71VS65163CL)(L_Version)
*CBR & Hidden Refresh
4096 cycles/64 ms (GM71V65163C)
4096 cycles/128 ms (GM71VS65163CL)( L-Version )
*4 variations of refresh
-RAS-only refresh
-CAS-before-RAS refresh
-Hidden refresh
-Self refresh (L-Version)
*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator
*Battery Back Up Operation ( L-Version )
Rev 0.1 / Apr鈥?1
(Top View)