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GM71V64803C

GM71VS64803CL

8,388,608 WORDS x 8 BIT

CMOS DYNAMIC RAM

Description

The GM71V(S)64803C/CL is the new generation

dynamic RAM organized 8,388,608 words by 8bits.

The GM71V(S)64803C/CL utilizes advanced CMOS

Silicon Gate Process Technology as well as

advanced circuit techniques for wide operating

margins, both internally and to the system user.

System oriented features include single power supply

of 3.3V+/-10% tolerance, direct interfacing

capability with high performance logic families such

as Schottky TTL.

The GM71V(S)64803C/CL offers Extended Data

Out(EDO) Mode as a high speed access mode.

Pin Configuration

32 SOJ / TSOP II

VCC

IO0

IO1

IO2

IO3

NC

VCC

/WE

/RAS

A0

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

VSS

IO7

IO6

IO5

IO4

VSS

/CAS

/OE

A12

A11

A10

A9

A8

A7

A6

VSS

Features

*8,388,608 Words x 8 Bit

* Extended Data Out (EDO) Mode Capability

* Fast Access Time & Cycle Time

(Unit: ns)

A1

A2

A3

A4

A5

VCC

t

RAC

GM71V(S)64803C/CL-5

GM71V(S)64803C/CL-6

50

60

t

AA

25

30

t

CAC

13

15

t

RC

84

104

t

HPC

20

25

Power dissipation

- Active : 450mW/414mW(MAX)

- Standby : 1.8 mW ( CMOS level : MAX )

0.54mW ( L-Version : MAX)

*EDO page mode capability

*Access time : 50ns/60ns (max)

*Refresh cycles

- RAS only Refresh

8192 cycles/64 ms (GM71V64803C)

8192 cycles/128ms (GM71VS64803CL)(L_Version)

*CBR & Hidden Refresh

4096 cycles/64 ms (GM71V64803C)

4096 cycles/128 ms (GM71VS64803CL)( L-Version )

*4 variations of refresh

-RAS-only refresh

-CAS-before-RAS refresh

-Hidden refresh

-Self refresh (L-Version)

*Single Power Supply of 3.3V+/-10 % with a built-in VBB generator

*Battery Back Up Operation ( L-Version )

Rev 0.1 / Apr鈥?1

(Top View)

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