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GM71V18163CJ-6E

1,048,576 WORDS x 16 BIT

EDO DRAM-ET Part

Description

The GM71V18163CJ-6E is the new

generation dynamic RAM organized

1,048,576 x 16 bit. GM71V18163CJ-6E has

realized higher density, higher performance

and various functions by utilizing advanced

CMOS process technology. The

GM71V18163CJ-6E offers Extended Data

out(EDO) Mode as a high speed access

mode. Multiplexed address inputs permit the

GM71V18163CJ-6E to be packaged in

standard 400 mil 42pin plastic SOJ. The

package size provides high system bit

densities and is compatible with widely

available automated testing and insertion

equipment.

Features

* 1,048,576 Words x 16 Bit Organization

* Extended Data Out Mode Capability

* Single Power Supply (3.3V+/-0.3V)

* Fast Access Time & Cycle Time

(Unit: ns)

t

RAC

t

CAC

t

RC

GM71V18163CJ-6E

60

15

104

t

HPC

25

* Low Power

Active : 684/612/540mW (MAX)

Standby : 7.2mW (CMOS level : MAX)

0.83mW (L-version : MAX)

* /RAS Only Refresh, /CAS before /RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 1024 Refresh Cycles/16ms

* 2 CAS byte Control

Pin Configuration

(Top View)

V

CC

I/O0

I/O1

I/O2

I/O3

V

CC

I/O4

I/O5

I/O6

I/O7

NC

NC

/WE

/RAS

NC

NC

A0

A1

A2

A3

V

CC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

42 SOJ

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

V

SS

I/O15

I/O14

I/O13

I/O12

V

SS

I/O11

I/O10

I/O9

I/O8

NC

/LCAS

/UCAS

/OE

A9

A8

A7

A6

A5

A4

V

SS

Rev 0.1 / Apr鈥?1

next

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