LG Semicon Co.,Ltd.
Description
The GM71C(S)4100C/CL is the new generation
dynamic RAM organized 4,194,304 words x 1 bit.
GM71C(S)4100C/CL has realized higher density,
higher performance and various functions by
utilizing advanced CMOS process technology. The
GM71C(S)4100C/CL offers Fast Page Mode as a
high speed access Mode. Multiplexed address
inputs permit the GM71C(S)4100C/CL to the
packaged in a standard 300mil 20(26) pin plastic
SOJ and standard 300mil 20(26) pin plastic TSOP
II. The package size provides high system bit
densities and is compatible with widely available
automated testing and insertion equipment. System
oriented features include single power supply of
5V+/-10% tolerance, direct interfacing capability
with high performance logic families such as
Schottky TTL.
GM71C(S)4100C/CL
4,194,304 WORDS x 1BIT
CMOS DYNAMIC RAM
Features
* 4,194,304 Words x 1 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
t
RAC
GM71C(S)4100C/CL-60
GM71C(S)4100C/CL-70
GM71C(S)4100C/CL-80
60
70
80
t
CAC
15
20
20
t
RC
110
130
150
t
PC
40
45
50
Pin Configuration
20 (26) SOJ
D
IN
WE
RAS
NC
A10
1
2
3
4
5
20
19
18
17
16
* Low Power
Active : 605/550/495mW (MAX)
Standby : 5.5mW (CMOS level : MAX)
1.1mW (L-version)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 1024 Refresh Cycles/16ms
* 1024 Refresh Cycles/128ms (L-version)
* Battery Back Up Operation (L-version)
20 (26) TSOP II
V
SS
D
OUT
CAS
NC
A9
D
IN
WE
RAS
NC
A10
1
2
3
4
5
20
19
18
17
16
V
SS
D
OUT
CAS
NC
A9
V
SS
D
OUT
CAS
NC
A9
20
19
18
17
16
1
2
3
4
5
D
IN
WE
RAS
NC
A10
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A0
A1
A2
A3
V
CC
6
7
8
9
10
15
14
13
12
11
A8
A7
A6
A5
A4
A8
A7
A6
A5
A4
15
14
13
12
11
6
7
8
9
10
A0
A1
A2
A3
V
CC
NORMAL TYPE
REVERSE TYPE
(Top View)
(Top View)
1