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GLT5640AL16-8TC Datasheet

  • GLT5640AL16-8TC

  • 4M X 16 CMOS Synchronous Dynamic RAM

  • 72頁

  • ETC

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G -LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
Description
The GLT5640AL16 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as
1,048,576 x 16 x 4 (word x bit x bank), respectively.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up
to 183MHz. All input and outputs are synchronized with the positive edge of the clock. The synchronous DRAMs are
compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII.
Features
鈥?/div>
Single 3.3V ((鹵0.3V) power supply
鈥?High speed clock cycle time -5.5:183MHz<3-3-3>,-6:166MHz<3-3-3>, -7:143MHz<3-3-3>, -8: 125MHz<3-3-3>
-10 : 100MHz<3-3-3>
鈥?Fully synchronous operation referenced to clock rising edge
鈥?Possible to assert random column access in every cycle
鈥?Quad internal banks controlled by BA0 & BA1 (Bank Select)
鈥?Byte control by LDQM and UDQM
鈥?Programmable Wrap sequence (Sequential / Interleave)
鈥?Programmable burst length (1, 2, 4, 8 and full page)
鈥?Programmable /CAS latency (2 and 3)
鈥?Automatic precharge and controlled precharge
鈥?CBR (Auto) refresh and self refresh
鈥?X16 organization
鈥?LVTTL compatible inputs and outputs
鈥?4,096 refresh cycles / 64ms
鈥?Burst termination by Burst stop and Precharge command
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw
Email : sales@glink.com.tw
TEL : 886-2-27968078
-1-

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