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GLT5160L16I-8TC Datasheet

  • GLT5160L16I-8TC

  • 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM

  • 45頁

  • ETC

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GLT5160L16
16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM
ADVANCED
F
EATURES
u Single 3.3 V 鹵0.3 V power supply
u Clock frequency 100 MHz / 125 MHz / 143 MHz/
166 MHz
u Fully synchronous operation referenced to clock rising edge
u Dual bank operation controlled by BA (Bank Address)
u CAS latency- 2 / 3 (programmable)
u Burst length- 1 / 2 / 4 / 8 & Full Page (programmable)
u Burst type- sequential / interleave (programmable)
u Industrial grade available
u
u
u
鈥?/div>
u
鈥?/div>
u
u
u
Byte control by DQMU and DQML
Column access - random
Auto precharge / All bank precharge controlled by A[10]
Auto refresh and Self refresh
4096 refresh cycles / 64 ms
LVTTL Interface
400-mil, 50-Pin Thin Small Outline Package (TSOP II) with
0.8 mm lead pitch
u 60-Ball, 6.4mmx10.1mm VFBGA package with 0.65mm Ball
鈥?/div>
pitch & 0.35mm Ball diameter.
G
ENERAL
D
ESCRIPTION
The GLT5160L16 is a 2-bank x 524288-word x 16-bit Synchro-
nous DRAM, with LVTTL interface. All inputs and outputs are
referenced to the rising edge of CLK. The GLT5160L16 achieves
very high speed data rate up to 166 MHz, and is suitable for main
memory or graphic memory in computer systems.
DEC. 2003 (Rev.2.4)
1

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