PHOTODIODE
InGaAs PIN photodiode
G6849 series
Quadrant type
Features
G6849 :
B
2 mm quadrant element
G6849-01:
B
1 mm
quadrant element
l
Low noise
l
High reliability
Applications
l
Active area
l
Spot light position detection
l
Measurement equipment
s
General ratings
Parameter
Package
Active area
G6849
TO-5
蠁2/quadrant
蠁1/quadrant
G6849-01
Unit
-
mm
s
Absolute maximum ratings (Ta=25
擄C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
V
R
Topr
Tstg
Value
5
-40 to +85
-55 to +125
Unit
V
擄C
擄C
s
Electrical and optical characteristics (Ta=25
擄C,
per 1 element)
Parameter
Spectral response range
P e ak sensitivity wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal capacitance
Shunt resistance
Detectivity
Noise equivalent power
Symbol
位
位p
S
I
D
fc
Ct
Rsh
D
鈭?/div>
NEP
位=1.3
碌m
位=1.55
碌m
V
R
=1 V
V
R
=1 V, R
L
=50
鈩?/div>
位=1.3
碌m, -3 dB
V
R
=1 V, f=1 MHz
V
R
=10 mV
位=位p
位=位p
Condition
Min.
-
-
G6849
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.5
30
100
50
5 脳 10
12
2 脳 10
-14
Max.
-
-
-
-
5
-
-
-
-
-
Min.
-
-
G6849-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.15
120
20
200
5 脳 10
12
1 脳 10
-14
Max.
-
-
-
-
1.5
-
-
-
-
-
Unit
碌m
碌m
A/W
nA
MHz
pF
M鈩?/div>
cm路Hz
1/2
/W
W/Hz
1/2
-
-
-
-
-
-
-
-
-
-
-
-
1
1
2
