PHOTODIODE
InGaAs PIN photodiode
G6742 series
Surface-mount type
Features
Applications
l
Small chip carrier package
l
High reliability
l
Low price
l
Laser diode monitors
s
General ratings
Package
Active area
Parameter
G6742-003
Ceramic base
蠁0.3
G6742-003
20
-40 to +85 *
-55 to +125 *
G6742-01
蠁1.0
G6742-01
10
Unit
-
mm
Unit
V
擄C
擄C
s
Absolute maximum ratings
Parameter
Symbol
Reverse voltage
V
R
Max.
Operating
Topr
temperature
Storage temperature
Tstg
* No condensation
s
Electrical and optical characteristics (Ta=25
擄C)
Parameter
Spectral response
range
Peak sensitivity
wavelength
Photo sensitivity
Dark current
Cut-off frequency
Terminal
capacitance
Shunt resistance
Detectivity
Noise equivalent
power
Symbol
位
位p
S
I
D
fc
Ct
Rsh
D
鈭?/div>
NEP
位=1.3
碌m
位=1.55
碌m
V
R
=5 V
V
R
=5 V, R
L
=50
鈩?/div>
-3 dB
f=1 MHz
V
R
=5 V
V
R
=10 mV
位=位p
位=位p
Condition
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G6742-003
Typ.
0.9 to 1.7
1.55
0.9
0.95
0.3
300
10
1000
5 脳 10
12
4 脳 10
-15
Max.
-
-
-
-
1.5
-
-
-
-
-
Min.
-
-
0.8
0.85
-
-
-
-
-
-
G6742-01
Typ.
0.9 to 1.7
1.55
0.9
0.95
1
35
90
100
5 脳 10
12
2 脳 10
-14
Max.
-
-
-
-
5
-
-
-
-
-
Unit
碌m
碌m
A/W
nA
MHz
pF
M鈩?/div>
cm 路 Hz
1/2
/W
W/Hz
1/2
1
2
