SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Very low equivalent on-resistance;
R
CE(sat)
125m鈩?at 2A
* Gain of 200 at I
C
=1 Amp and very low saturation voltage
APPLICATIONS
* DC-DC converters, Siren drivers.
COMPLEMENTARY TYPE -
FZT690B
PARTMARKING DETAIL -
FZT790A
FZT790A
C
E
C
B
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
TYP.
-70
-60
-8.5
-0.1
-10
-0.1
-0.15
-0.30
-0.40
-0.8
-0.75
300
250
200
150
100
24
35
600
800
-0.25
-0.45
-0.75
-1.0
VALUE
-50
-40
-5
-6
-3
2
-55 to +150
MAX. UNIT
V
V
V
碌
A
碌
A
碌
A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
MIN.
-50
-40
-5
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
Breakdown Voltages
CONDITIONS.
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-30V
V
CB
=-30V,
Tamb
=100擄C
V
EB
=-4V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-50mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V
I
C
=-500mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
V
V
V
V
V
Base-EmitterTurn-OnVoltage V
BE(on)
h
FE
f
T
C
obo
t
on
t
off
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-5V
f=50MHz
V
CB
=-10V,f=1MHz
I
C
=-500mA,
I
B1
=-50mA,
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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