SOT223 PNP SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 聳 OCTOBER 1995
FEATURES
* Extremely low equivalent on-resistance;
R
CE(sat)
93m鈩?at 3A
* Gain of 200 at I
C
=2 Amps and very low saturation voltage
APPLICATIONS
* Battery powered circuits, fast charge converters
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
FZT689B
FZT789A
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
FZT789A
C
E
C
B
VALUE
-25
-25
-5
-6
-3
2
-55 to +150
UNIT
V
V
V
A
A
W
擄C
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
Breakdown Voltages
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
Collector Cut-Off Current
Emitter Cut-Off Current
Saturation Voltages
I
CBO
I
EBO
V
CE(sat)
-25
-25
-5
-40
-35
-8.5
-0.1
10
-0.1
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
V
V
V
碌
A
碌
A
碌
A
I
C
=-100
碌
A
I
C
=-10mA*
I
E
=-100
碌
A
V
CB
=-15V
V
CB
=-15V, T
amb
=100擄C
V
EB
=-4V
I
C
=-1A, I
B
=-10mA*
I
C
=-2A, I
B
=-20mA*
I
C
=-3A, I
B
=-100mA*
I
C
=-1A, I
B
=-10mA*
I
C
=-1A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V
I
C
=-1A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-6A, V
CE
=-2V*
-0.15 -0.25 V
-0.30 -0.45 V
-0.30 -0.50 V
-0.8
-0.8
300
250
200
100
100
225
25
35
400
800
-1.0
V
V
V
BE(sat)
Base-Emitter
Turn-On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
MHz I
C
=-50mA, V
CE
=-5V, f=50MHz
pF
pF
ns
ns
V
EB
=-0.5V, f=1MHz
V
CB
=-10V, f=1MHz
I
C
=-500mA, I
B1
=-50mA
I
B2
=-50mA, V
CC
=-10V
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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