SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* Gain of 400 at I
C
=2 Amps and low saturation voltage
* Extremely low equivalent on-resistance;
R
CE(sat)
92m鈩?at 3A
APPLICATIONS
* Darlington replacement
* Flash gun convertors and Battery powered circuits
PARTMARKING DETAIL -
FZT689B
COMPLEMENTARY TYPE -
FZT789B
FZT689B
C
E
C
B
VALUE
20
20
5
8
3
2
-55 to +150
UNIT
V
V
V
A
A
W
擄C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
Breakdown Voltage
Collector-Base
Collector-Emitter
Emitter-Base
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
MIN.
20
20
5
0.1
0.1
0.10
0.50
0.45
0.9
0.9
500
400
150
150
200
16
30
800
MHz
pF
pF
ns
ns
TYP.
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C)
MAX. UNIT CONDITIONS.
V
V
V
碌
A
碌
A
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=16V
V
EB
=4V
I
C
=0.1A, I
B
=0.5mA*
I
C
=2A, I
B
=10mA*
I
C
=3A, I
B
=20mA*
I
C
=1A, I
B
=10mA*
I
C
=1A, V
CE
=2V*
I
C
=0.1A, V
CE
=2V*
I
C
=2A, V
CE
=2V*
I
C
=6A, V
CE
=2V*
I
C
=50mA, V
CE
=5V
f=50MHz
V
EB
=0.5V, f=1MHz
V
CB
=10V, f=1MHz
I
C
=500mA,I
B1
=50mA
I
B2
=50mA, V
CC
=10V
V
V
V
V
V
Base-EmitterSaturationVoltage V
BE(sat)
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Ratio
Transition Frequency
Input Capacitance
Output Capacitance
Switching Times
V
BE(on)
h
FE
f
T
C
ibo
C
obo
t
on
t
off
*Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
鈮?/div>
2%
Spice parameter data is available upon request for this device
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