PNP SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTOR
ISSUE 1 聳 FEB 94
FEATURES
* 120 Volt V
CEO
* Gain of 3K at I
C
=1 Amp
* P
tot
= 1 Watt
APPLICATIONS
* Lamp, solenoid and relay drivers
* Replacement of TO126 and TO220 darlingtons
REFER TO ZTX705 FOR GRAPHS
FXT705
B
C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
-140
-120
-10
-4
-1
1
E-Line
TO92 Compatible
VALUE
UNIT
V
V
V
A
A
W
擄C
-55 to +200
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
3k
3k
3k
2k
160
3-55
MIN.
-140
-120
-10
-0.1
-10
-10
-0.1
-1.3
-2.5
-1.8
-1.7
TYP.
MAX.
UNIT
V
V
V
碌
A
碌
A
碌
A
碌
A
CONDITIONS.
I
C
=-100
碌
A, I
E
=0
I
C
=-10mA, I
B
=0*
I
E
=-100
碌
A, I
C
=0
V
CB
=-120V, I
E
=0
V
CB
=-120V,
T
amb
=100擄C
V
CES
=-80V
V
EB
=-8V
I
C
=-1A, I
B
=-1mA*
I
C
=-2A, I
B
=-2mA*
I
C
=-1A, I
B
=-10mA*
IC=-1A, V
CE
=-5V*
I
C
=-10mA, V
CE
=-5V*
I
C
=-100mA, V
CE
=-5V*
I
C
=-1A, V
CE
=-5V*
I
C
=-2A, V
CE
=-5V*
V
V
V
V
Static Forward
h
FE
Current Transfer Ratio
Transition
Frequency
f
T
30k
MHz
I
C
=-100mA, V
CE
=-10V
f=20MHz
1
