NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 1 聳 FEB 94
FEATURES
* 300 Volt V
CEO
* 0.5 Amps continuous current
* P
tot
= 1 Watt
APPLICATIONS
* Telephone dialler circuits
* Video output drivers
REFER TO ZTX657 FOR GRAPHS
FXT657
B
C
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
300
300
5
1
0.5
1
-55 to +200
UNIT
V
V
V
A
A
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
MIN.
300
300
5
100
100
0.5
1
1
40
50
30
20
MHz
pF
TYP.
MAX.
UNIT
V
V
V
nA
nA
V
V
V
CONDITIONS.
I
C
=100
碌
A, I
E
=0
I
C
=10mA, , I
B
=0*
I
E
=100
碌
A, I
C
=0
V
CB
=200V, I
E
=0
V
EB
=3V, I
C
=0
I
C
=100mA, I
B
=10mA*
I
C
=100mA, I
B
=10mA*
IC=100mA, V
CE
=5V*
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
Emitter Cut-Off Current I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
Static Forward Current h
FE
Transfer Ratio
Transition
Frequency
Output Capacitance
f
T
C
obo
* Measured under pulsed conditions. Pulse width=300
碌
s. Duty cycle
1
