NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 聳 SEPTEMBER 1994
FEATURES
* 400 Volt V
CEO
* 0.5 Amp continuous current
* P
tot
= 1 Watt
FXT458
B
C
E
REFER TO ZTX458 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25擄C
Operating and Storage Temperature Range
PARAMETER
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
CES
I
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
C
obo
100
100
15
50
5
MIN.
400
400
5
100
100
100
0.2
0.5
0.9
0.9
300
MHz
pF
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
TYP.
MAX.
E-Line
TO92 Compatible
VALUE
400
400
5
300
1
-55 to +200
UNIT
V
V
V
nA
nA
nA
V
V
V
V
CONDITIONS.
I
C
=100
碌
A
I
C
=10mA*
I
E
=100
碌
A
V
CB
=320V
VCE=320V
V
EB
=4V
I
C
=20mA, I
B
=2mA
I
C
=50mA, I
B
=6mA
I
C
=50mA, I
B
=5mA
IC=50mA, V
CE
=10V
I
C
=1mA, V
CE
=10V
I
C
=50mA, V
CE
=10V
I
C
=100mA, V
CE
=10V*
I
C
=10mA, V
CE
=20V
f=20MHz
V
CB
=20V, f=1MHz
UNIT
V
V
V
mA
W
擄C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25擄C).
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward Current
Transfer Ratio
Transition Frequency
Collector-Base
Breakdown Voltage
3-35
1
